The target is that each publication would have three comments, so if VPHA co-authors would like to read and comment some of these, that would be welcome and useful for the overall VPHA progress. In this list, we have plenty of papers available in English as well as other languages.
{Boehm1963} | The water contents of dried silica surfaces |
{Aleskovskii1965b} ru | Reaction of antimony pentachloride with silica gel |
{Kuznetsova1965-PhD} | Examination of a number of typical products of interaction of hydrated silica with ions of metals by the method of IR-spectroscopy |
{Prudnikov1966} ru | Effect of water adsorption of the rate of surface recombination and surface conductivity of Germanium |
{Sveshnikova1967} ru | Reaction of titanium tetrachloride with silicon |
{Koltsov1968b} ru | The change of silica porosity by molecular layering method |
{Eakings1968} en | Silanol groups on silica and their reactions with trimethylchlorsilane and trimethylsilanole. |
{Koltsov1969b} en ru | Preparation and investigation of the chemical composition of the products formed by successive chemisorption of titanium and phosphorus chlorides on the surface of silica gel. |
{Sveshnikova1969} ru | Synthesis of silicon oxide with specified thickness on the surface of monocrystalline silicon via molecular layering method |
{Yates1969} en | Infrared studies of the reactions between silica and trimethylaluminum |
{Rachkovskii1970} en ru | Reaction of tin tetrachloride with silica gel |
{Chien1971} en | A study of surface structures of submicron metal oxide by vanadium tetrachlorlde as a paramagnetic probe |
{Malygin1973} en | Reaction of vanadyl trichloride with silica |
{Pak1973} ru en | Diffuse reflectance spectrum of the surface of titanium-containing silica |
{Volkova1974} ru | Title: The method of synthesis of Cr(III) and P(V) oxide layers on the silicagel surface |
{Malygin1974} ru | Title: The method of synthesis of vanadium oxide catalyst for the oxidation of organic compounds |
{Smirnov1974} en ru | Interaction of water vapor with chlorine-containing microcrystalline carbon |
{Pak1974b} ru en | Investigation of dehydratation of the surface of titaniumcontaining silica by thermodesorption method |
{Koltsov1974} en | Change in the structure of silica gel in the process of the formation of a layer of phosphorus pentoxide on its surface |
{Koltsov1974a} ru | Successive reaction-products of boron tribromide and titanium tetrachloride with silica-gel |
{Pak1975a} ru | Electronic spectra of titanium (VI) containing compounds |
{Aleskovskii1976} en ru | Stoichiometry and synthesis of solid compounds |
{Damyanov1976} ru | Preparation of metal oxide layers deposited on a support by a surface reaction. I. Chromium oxides on silica gel |
{Koltsov1976c} en ru | Chemical homogenization of carbon surfaces |
{Kovalkov1976} en ru | Synthesis of proton-donor OH groups on the surface of highly dispersed carbon |
{Pak1976} en ru | Structural effects of silica surfaces on molecularly superposed titanium-oxygen layers |
{Hair1977} en | Effect of surface structure on the reaction of silica surface with hydrogen-sequestering agents |
{Koltsov1977} en ru | Investigation of the structure of titanium oxide layers synthesized by molecular stratification on the surface of single-crystal backings |
{Koltsov1978} en ru | Study of aluminosilicate systems synthesized by the molecular-layering method |
{Postnova1978} ru | QUALITY EFFECT OF PHOSPHORUS OXIDE MONOLAYERS ON CATALYTIC ACTIVITY OF VANADIUM AND PHOSPHORUS-CONTAINING SILICA-GELS, OBTAINED BY MOLECULAR STRATIFICATION METHOD |
{Smirnov1978} en | Synthesis of halide functional groups on the surface of diamond |
{Drozd1978-PhD} | Synthesis and study of oxide coatings obtained by molecular layering on semiconductor surfaces [in Russian] : Diss ... Candidate . nat . mat. Science |
{Krylov1979} ru | Effect of oxide interlayers on the properties of Metal-Semiconductor contact |
{Aleskovskii1979} en | Electrical properties of the surface of germanium in contact with transition-metal oxides formed by the molecular deposition method |
{Damyanov1979} en | Changes in the porous spectrum of titanium-containing silica gels obtained by the molecular deposition method |
{Koltsov1979} en | Molecular layering of boron oxide on the surface of silica |
{Malygin1979} en | Study of the properties of vanadium-containing silica gel |
{Velikova1979} ru en | The TiCl4 with amorphous SiO2 interaction in the process of catalysts preparation by the molecular deposition method |
{Yakovlev1979} en | Mathematical model of molecular layering with the aid of a fluidizided bed |
{Ylilammi1979} fi | Growth of thin oxide and aluminium oxide films through alternating surface reactions |
{Drozd1980} ru | Effect of molecular stratification of thin oxide layers on electrophysical properties of a semiconductor-oxide system |
{Ivin1980} ru | Reaction of chlorine with the surface of carbon fibers |
{Skarp1980-MD} | Doping of ALE ZnS for producing different colours in electroluminescent thin films [in Finnish], Master’s thesis, |
{Avrutina1981} ru | Study of products of reaction between ZnO and TiCl4 |
{Dergachev1981} en ru | Macrokinetics of the reaction of vanadium oxychloride with silica gel |
{Krasnobryzhii1981} ru | Adsorption of titanium chloride on the surface of carbon |
{Pessa1981} en | Characterization of surface exchange-reactions used to grow compound films |
{Smirnov1981a} ru | Synthesis of proton-generating functional groups by oxidation of carbon surface |
{Sokolov1981} ru | Application of the molecular stratification method for the enhancement of polymer adhesion to metal |
{Aleskovskii1982} en ru | The nature of solid chemical compounds |
{Gordeev1982b} en ru | Interaction of titanium tetrachloride with diamond preparations |
{Tornqvist1982} en | ON THE AGING OF ZnS-Mn ELECTROLUMINESCENT THIN-FILMS GROWN BY THE ATOMIC LAYER EPITAXY TECHNIQUE |
{Tolmachev1982} en ru | Possibility of the use of a gravimetric method for studying the process of molecular layering in disperse silica samples |
{Ivanova1983} ru en | Adhesion properties of surface modified by chromium oxides. |
{Damyanov1983} en | On the interaction of CrO$_2$Cl$_2$ vapor with the surface of $-alumina and the formation of a chromium oxide covering |
{Pessa1983} en | ATOMIC LAYER EPITAXY AND CHARACTERIZATION OF CdTe-FILMS GROWN ON CdTe (110) SUBSTRATES |
{Tolmachev1983} en ru | Investigation of the synthesis process and properties of titanium-oxide films, formed by molecular deposition method |
{Aidla1983} ru | About a New Method for Producing Electroluminescent Thin Film Structures |
{Tammenmaa1984} en | Growth of ZnS thin films using zinc acetate as zinc source and manganese and lanthanoid beta-diketonates as activator sources |
{Hyvaerinen1984} en | Development trends in ALE and thin film electroluminescent displays |
{Suni1984} en | III-V compounds for semiconductor technology |
{Asonen1984} en | Applications of thin films grown by MBE technique |
{Jylhae1984} en | Growth and characterization of CdTe-based thin semiconductor films, quantum well heterostructures and superlattices |
{Ezhovskii1984} ru en | Formation and structure of titanium-dioxide layers on the surface of tantalum |
{Herman1984} en | ATOMIC LAYER EPITAXY OF Cd$_1-X$Mn$_X$Te GROWN ON CdTe (111)B SUBSTRATES |
{Lahtinen1985} | EFFECT OF GROWTH TEMPERATURE ON THE ELECTRONIC-ENERGY BAND AND CRYSTAL-STRUCTURE OF ZnS THIN-FILMS GROWN USING ATOMIC LAYER EPITAXY |
{Nishizawa1985} en | MOLECULAR LAYER EPITAXY |
{Tammenmaa1985} en | Zinc chalcogenide thin films grown by the atomic layer epitaxy technique using zinc acetate as source material |
{Seitmagzimov1985} en ru | Change in potential of anodized aluminum upon its modification with titanium dioxide |
{Abakumov1985} ru en | Chemical assembly of a silicon-nitrogen layer on silicon |
{Abakumov1986} ru | Study of thin silicium-nitrogen layers by XPS and IR-spectroscopy |
{Vainshtein1986} ru en | Effect of the oxide layer thickness on the activity of silanol groups of the monocrystal silicon surface |
{Goodman1986} en | Atomic layer epitaxy |
{Horikoshi1986} en | LOW-TEMPERATURE GROWTH OF GaAs AND AlAs--GaAs QUANTUM-WELL LAYERS BY MODIFIED MOLECULAR-BEAM EPITAXY |
{Tischler1986} en | Growth and characterization of compound semiconductors by atomic layer epitaxy |
{Tischler1986b} en | Self-limiting mechanism in the atomic layer epitaxy of GaAs |
{Tischler1986d} | Improved uniformity of epitaxial indium-based compounds by atomic layer epitaxy |
{Yao1986c} en | The Effect of Lattice Misfit on Lattice Parameters and Photoluminescence Properties of Atomic Layer Epitaxy Grown ZnSe on (100)GaAs Substrates |
{Yao1986} en | Growth process in atomic layer epitaxy of Zn chalcogenide single crystalline films on (100)GaAs |
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Virtual Project on the History of ALD (VPHA) - in atmosphere of Openness, Respect, and Trust
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