Saturday, 19 March 2016

VPHA ALD publications with two comments - 79

Continuing on the previous posts showing the graphical big picture of the VPHA reading status and individually listing the early ALD publications with zero and one comments, this post lists publications which have received two comments in VPHA (total of 79).

The target is that each publication would have three comments, so if VPHA co-authors would like to read and comment some of these, that would be welcome and useful for the overall VPHA progress. In this list, we have plenty of papers available in English as well as other languages.


{Boehm1963}The water contents of dried silica surfaces
{Aleskovskii1965b} ruReaction of antimony pentachloride with silica gel
{Kuznetsova1965-PhD} Examination of a number of typical products of interaction of hydrated silica with ions of metals by the method of IR-spectroscopy
{Prudnikov1966} ruEffect of water adsorption of the rate of surface recombination and surface conductivity of Germanium
{Sveshnikova1967} ruReaction of titanium tetrachloride with silicon
{Koltsov1968b} ruThe change of silica porosity by molecular layering method
{Eakings1968} enSilanol groups on silica and their reactions with trimethylchlorsilane and trimethylsilanole.
{Koltsov1969b} en ruPreparation and investigation of the chemical composition of the products formed by successive chemisorption of titanium and phosphorus chlorides on the surface of silica gel.
{Sveshnikova1969} ruSynthesis of silicon oxide with specified thickness on the surface of monocrystalline silicon via molecular layering method
{Yates1969} enInfrared studies of the reactions between silica and trimethylaluminum
{Rachkovskii1970} en ruReaction of tin tetrachloride with silica gel
{Chien1971} enA study of surface structures of submicron metal oxide by vanadium tetrachlorlde as a paramagnetic probe
{Malygin1973} enReaction of vanadyl trichloride with silica
{Pak1973} ru enDiffuse reflectance spectrum of the surface of titanium-containing silica
{Volkova1974} ruTitle: The method of synthesis of Cr(III) and P(V) oxide layers on the silicagel surface
{Malygin1974} ruTitle: The method of synthesis of vanadium oxide catalyst for the oxidation of organic compounds
{Smirnov1974} en ruInteraction of water vapor with chlorine-containing microcrystalline carbon
{Pak1974b} ru enInvestigation of dehydratation of the surface of titaniumcontaining silica by thermodesorption method
{Koltsov1974} enChange in the structure of silica gel in the process of the formation of a layer of phosphorus pentoxide on its surface
{Koltsov1974a} ruSuccessive reaction-products of boron tribromide and titanium tetrachloride with silica-gel
{Pak1975a} ru Electronic spectra of titanium (VI) containing compounds
{Aleskovskii1976} en ruStoichiometry and synthesis of solid compounds
{Damyanov1976} ruPreparation of metal oxide layers deposited on a support by a surface reaction. I. Chromium oxides on silica gel
{Koltsov1976c} en ruChemical homogenization of carbon surfaces
{Kovalkov1976} en ruSynthesis of proton-donor OH groups on the surface of highly dispersed carbon
{Pak1976} en ruStructural effects of silica surfaces on molecularly superposed titanium-oxygen layers
{Hair1977} enEffect of surface structure on the reaction of silica surface with hydrogen-sequestering agents
{Koltsov1977} en ruInvestigation of the structure of titanium oxide layers synthesized by molecular stratification on the surface of single-crystal backings
{Koltsov1978} en ruStudy of aluminosilicate systems synthesized by the molecular-layering method
{Postnova1978} ruQUALITY EFFECT OF PHOSPHORUS OXIDE MONOLAYERS ON CATALYTIC ACTIVITY OF VANADIUM AND PHOSPHORUS-CONTAINING SILICA-GELS, OBTAINED BY MOLECULAR STRATIFICATION METHOD
{Smirnov1978} enSynthesis of halide functional groups on the surface of diamond
{Drozd1978-PhD}Synthesis and study of oxide coatings obtained by molecular layering on semiconductor surfaces [in Russian] : Diss ... Candidate . nat . mat. Science
{Krylov1979} ruEffect of oxide interlayers on the properties of Metal-Semiconductor contact
{Aleskovskii1979} enElectrical properties of the surface of germanium in contact with transition-metal oxides formed by the molecular deposition method
{Damyanov1979} enChanges in the porous spectrum of titanium-containing silica gels obtained by the molecular deposition method
{Koltsov1979} enMolecular layering of boron oxide on the surface of silica
{Malygin1979} enStudy of the properties of vanadium-containing silica gel
{Velikova1979} ru enThe TiCl4 with amorphous SiO2 interaction in the process of catalysts preparation by the molecular deposition method
{Yakovlev1979} enMathematical model of molecular layering with the aid of a fluidizided bed
{Ylilammi1979} fiGrowth of thin oxide and aluminium oxide films through alternating surface reactions
{Drozd1980} ruEffect of molecular stratification of thin oxide layers on electrophysical properties of a semiconductor-oxide system
{Ivin1980} ruReaction of chlorine with the surface of carbon fibers
{Skarp1980-MD}Doping of ALE ZnS for producing different colours in electroluminescent thin films [in Finnish], Master’s thesis,
{Avrutina1981} ruStudy of products of reaction between ZnO and TiCl4
{Dergachev1981} en ruMacrokinetics of the reaction of vanadium oxychloride with silica gel
{Krasnobryzhii1981} ruAdsorption of titanium chloride on the surface of carbon
{Pessa1981} enCharacterization of surface exchange-reactions used to grow compound films
{Smirnov1981a} ruSynthesis of proton-generating functional groups by oxidation of carbon surface
{Sokolov1981} ruApplication of the molecular stratification method for the enhancement of polymer adhesion to metal
{Aleskovskii1982} en ruThe nature of solid chemical compounds
{Gordeev1982b} en ruInteraction of titanium tetrachloride with diamond preparations
{Tornqvist1982} enON THE AGING OF ZnS-Mn ELECTROLUMINESCENT THIN-FILMS GROWN BY THE ATOMIC LAYER EPITAXY TECHNIQUE
{Tolmachev1982} en ruPossibility of the use of a gravimetric method for studying the process of molecular layering in disperse silica samples
{Ivanova1983} ru enAdhesion properties of surface modified by chromium oxides.
{Damyanov1983} enOn the interaction of CrO$_2$Cl$_2$ vapor with the surface of $-alumina and the formation of a chromium oxide covering
{Pessa1983} enATOMIC LAYER EPITAXY AND CHARACTERIZATION OF CdTe-FILMS GROWN ON CdTe (110) SUBSTRATES
{Tolmachev1983} en ruInvestigation of the synthesis process and properties of titanium-oxide films, formed by molecular deposition method
{Aidla1983} ruAbout a New Method for Producing Electroluminescent Thin Film Structures
{Tammenmaa1984} enGrowth of ZnS thin films using zinc acetate as zinc source and manganese and lanthanoid beta-diketonates as activator sources
{Hyvaerinen1984} enDevelopment trends in ALE and thin film electroluminescent displays
{Suni1984} enIII-V compounds for semiconductor technology
{Asonen1984} enApplications of thin films grown by MBE technique
{Jylhae1984} enGrowth and characterization of CdTe-based thin semiconductor films, quantum well heterostructures and superlattices
{Ezhovskii1984} ru enFormation and structure of titanium-dioxide layers on the surface of tantalum
{Herman1984} enATOMIC LAYER EPITAXY OF Cd$_1-X$Mn$_X$Te GROWN ON CdTe (111)B SUBSTRATES
{Lahtinen1985}EFFECT OF GROWTH TEMPERATURE ON THE ELECTRONIC-ENERGY BAND AND CRYSTAL-STRUCTURE OF ZnS THIN-FILMS GROWN USING ATOMIC LAYER EPITAXY
{Nishizawa1985} enMOLECULAR LAYER EPITAXY
{Tammenmaa1985} enZinc chalcogenide thin films grown by the atomic layer epitaxy technique using zinc acetate as source material
{Seitmagzimov1985} en ruChange in potential of anodized aluminum upon its modification with titanium dioxide
{Abakumov1985} ru enChemical assembly of a silicon-nitrogen layer on silicon
{Abakumov1986} ruStudy of thin silicium-nitrogen layers by XPS and IR-spectroscopy
{Vainshtein1986} ru enEffect of the oxide layer thickness on the activity of silanol groups of the monocrystal silicon surface
{Goodman1986} enAtomic layer epitaxy
{Horikoshi1986} enLOW-TEMPERATURE GROWTH OF GaAs AND AlAs--GaAs QUANTUM-WELL LAYERS BY MODIFIED MOLECULAR-BEAM EPITAXY
{Tischler1986} enGrowth and characterization of compound semiconductors by atomic layer epitaxy
{Tischler1986b} enSelf-limiting mechanism in the atomic layer epitaxy of GaAs
{Tischler1986d}Improved uniformity of epitaxial indium-based compounds by atomic layer epitaxy
{Yao1986c} enThe Effect of Lattice Misfit on Lattice Parameters and Photoluminescence Properties of Atomic Layer Epitaxy Grown ZnSe on (100)GaAs Substrates
{Yao1986} enGrowth process in atomic layer epitaxy of Zn chalcogenide single crystalline films on (100)GaAs

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Virtual Project on the History of ALD (VPHA) - in atmosphere of Openness, Respect, and Trust

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