The next major international event in the field of atomic layer deposition (ALD) will be the ALD 2016 conference in Ireland in July 2016. To this post, I have collected information on oral presentations from Finland from the conference programme page recently released.
In total, there will be 16 oral presentations from six affiliations in Finland: Aalto
University (3), ASM (1), Beneq (1), University of Helsinki (5), University of Jyväskylä (1), and VTT Technical
Research Centre of Finland (5). Additionally, there will of course be many poster presentations, including the VPHA poster. Oral presentation titles and times are copied below.
I think that the titles nicely illustrate the multitude of ALD research being made on ALD in Finland, four decades after the first experiments were made by Suntola and co-workers to make ALD (then ALE, Atomic Layer Epitaxy) based thin-film electroluminescent displays (link).
I think that the titles nicely illustrate the multitude of ALD research being made on ALD in Finland, four decades after the first experiments were made by Suntola and co-workers to make ALD (then ALE, Atomic Layer Epitaxy) based thin-film electroluminescent displays (link).
Those who have interest in ALD in Finland are all welcome to join the Finland ALD group in LinkedIn, where Finland ALD -related news are shared. There are currently 237 members, most of them from Finland and some from abroad.
Ahvenniemi,
Esko
Aalto University, Finland
Direct one-step ALD/MLD process for thin film metal-organic frameworks
Tuesday 26 July: Hybrid organic-inorganic films - Tuesday 26 July 11:00-12:30
11:15-11:30
Aalto University, Finland
Direct one-step ALD/MLD process for thin film metal-organic frameworks
Tuesday 26 July: Hybrid organic-inorganic films - Tuesday 26 July 11:00-12:30
11:15-11:30
Hagen, Dirk
Laboratory of Inorganic Chemistry, Aalto University, Finland
Atomic layer deposition of highly conductive p-type oxides
Wednesday 27 JULY: Transparent conductive oxides and optical applications 1 - Wednesday 27 July 08:45-10:15
09:15-09:30
Kääriäinen, Tommi
University of Helsinki, Laboratory of Inorganic Chemistry, Finland
Atomic layer deposition on solid pharmaceutical powders
Tuesday 26 July: ALD onto particles - Tuesday 26 July 08:45-10:15
08:45-09:00
Kukli, Kaupo
University of Helsinki, Department of Chemistry, Finland
Atomic layer deposition of oxides exhibiting resistive switching characteristics
Tuesday 26 July: Memory applications 2 - Tuesday 26 July 13:45-15:15
14:45-15:00
Mäntymäki, Miia
University of Helsinki, Finland
Lithium containing transition metal oxides by solid state reaction of atomic layer deposited thin films
Monday 25 July: Battery applications - Monday 25 July 15:45-17:15
16:30-16:45
Mattinen, Miika
Laboratory of Inorganic Chemistry, Department of Chemistry, University of Helsinki, Finland
Atomic layer deposition of molybdenum disulfide from Mo(thd)3 and H2S
Monday 25 July: Transition metal dichalcogenides - Monday 25 July 13:45-15:15
14:00-14:15
Napari, Mari
University of Jyväskylä, Department of Physics, Finland
Effect of the alpha-gamma plasma mode transition on the plasma-enhanced atomic layer deposition with O2/N2 RF capacitive discharges
Tuesday 26 July: Plasma-enhanced deposition and etching - Tuesday 26 July 15:45-17:15
16:15-16:30
Nisula, Mikko
Aalto University, Finland
Insights into crystalline lithium-based hybrid inorganic-organic thin films by ALD/MLD
Tuesday 26 July: Hybrid organic-inorganic films - Tuesday 26 July 11:00-12:30
11:30-11:45
Pore, Viljami
ASM, Finland
Scale-up of MLD polyimide to 300 mm
Tuesday 26 July: Hybrid organic-inorganic films - Tuesday 26 July 11:00-12:30
11:45-12:00
Putkonen, Matti
VTT Technical Research Centre of Finland, Finland
Utilising ALD for PEM fuel cells
Tuesday 26 July: Applications to catalysis - Tuesday 26 July 15:45-17:15
16:45-17:00
Puurunen, Riikka
VTT Technical Research Centre of Finland, Finland Comparison of interpretations on the surface chemistry of the trimethylaluminium-water ALD process Tuesday 26 July: Mechanism of ALD - Tuesday 26 July 11:00-12:30 11:45-12:00 |
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Puurunen, Riikka L. VTT Technical Research Centre of Finland, Finland Study of processing parameters on the mechanical and compositional properties of plasma-enhanced atomic layer deposition aluminum nitride films. Wednesday 27 JULY: Chalcogenides / Mechanical properties - Wednesday 27 July 16:00-17:30 17:00-17:15 |
Sneck,
Sami
Beneq Oy, Finland
Development of the world's most transparent display - enabled by ALD
Wednesday 27 JULY: Transparent conductive oxides and optical applications 1 - Wednesday 27 July 08:45-10:15
09:30-09:45
Beneq Oy, Finland
Development of the world's most transparent display - enabled by ALD
Wednesday 27 JULY: Transparent conductive oxides and optical applications 1 - Wednesday 27 July 08:45-10:15
09:30-09:45
Svärd, Laura
VTT Technical Research Center of Finland, Finland
Novel low-temperature MLD processes based on monofunctional aromatic compounds and ring opening reaction
Tuesday 26 July: Hybrid organic-inorganic films - Tuesday 26 July 11:00-12:30
12:15-12:30
Tupala, Jere
University of Helsinki, Finland
Atomic layer deposition of tin oxide thin films using bis[bis(trimethylsilyl)amino]tin(II) and water or ozone
Wednesday 27 JULY: Transparent conductive oxides and optical applications 2 - Wednesday 27 July 11:00-12:30
11:30-11:45
Ylivaara,
Oili
VTT Technical Research Centre of Finland, Finland
Residual stress in thin films made by atomic layer deposition
Wednesday 27 JULY: Chalcogenides / Mechanical properties - Wednesday 27 July 16:00-17:30
17:15-17:30
VTT Technical Research Centre of Finland, Finland
Residual stress in thin films made by atomic layer deposition
Wednesday 27 JULY: Chalcogenides / Mechanical properties - Wednesday 27 July 16:00-17:30
17:15-17:30
(post title updated after original publication: "research" added)
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Virtual Project on the History of ALD (VPHA) - in atmosphere of Openness, Respect, and Trust
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